| 摘要 |
1,152,156. Semi-conductor devices. RADIO CORPORATION OF AMERICA. 12 March, 1968 [22 March, 1967], No. 12002/68. Heading H1K. The reverse breakdown characteristic of a PN junction formed near the surface of a monocrystalline semi-conductor is improved by the provision on the surface zone of a layer of polycrystalline semi-conductor. Contacts are applied to the monocrystalline bulk and to the polycrystalline layer; the layer may be formed of the same or a different semi-conductor. The diodes 11 shown are held together by glass 12 during processing and when completed may be separated individually or in groups. (The formation of the assembly involves hot-pressing together a glass plate and a prepared semi-conductor structure.) Each diode has a low resistivity mono- or polycrystalline portion 13 carrying a monocrystalline body 14 of higher resistivity; a high resistivity epitaxial layer 16 is deposited on this and then, by more rapid deposition or by the use of a different temperature, low resistivity polycrystalline material 18 is deposited. The first three parts 13, 14, 16 may be silicon and the polycrystalline layer 18 germanium or vice versa or all parts may be silicon. Semi-conductors such as silicon-germanium alloys and A<SP>III</SP>B<SP>V</SP> compounds may also be used. A deathium impurity such as gold may be incorporated in the first portion 13. A transistor (Figure 2, not shown) may be formed as a standard planer transistor and polycrystalline semi-conductor regions are formed instead of the normal electrode metallization for the emitter and base regions. Emitter and base electrodes are then applied to the polycrystalline regions. The material of the polycrystalline regions each may be the same or different to that of the transistor body. |
