发明名称 IMMERSIELITHOGRAFIE GEBRUIKMAKEND VAN EEN SPECIFIEKE CONTACTHOEK.
摘要 A semiconductor device having a specific contact angle for immersion lithography is disclosed. The semiconductor device includes a substrate and a top layer disposed on the substrate. The top layer used in an immersion lithography process includes a composition such that a fluid droplet that occurs during the immersion lithographic process and is not part of an exposure fluid puddle, will have a contact angle between about 40° and about 80° with a surface of the top layer.
申请公布号 NL2005891(A) 申请公布日期 2011.01.10
申请号 NL20102005891 申请日期 2010.12.22
申请人 TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., 发明人 HO, BANG-CHEIN;SHIH, JEN-CHIEH
分类号 G03F7/20 主分类号 G03F7/20
代理机构 代理人
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