发明名称 |
One-time programmable cell and memory device having the same |
摘要 |
One-time programmable cell and memory device having the same includes a first metal oxide semiconductor (MOS) transistor configured to form a current path between a first node and a second node in response to a read-control signal, a second MOS transistor configured to form a current path between a third node and the second node in response to a write-control signal and an anti-fuse connected between the second node and a ground voltage terminal, wherein a voltage applied to the second node is output as an output signal.
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申请公布号 |
US7852656(B2) |
申请公布日期 |
2010.12.14 |
申请号 |
US20080071127 |
申请日期 |
2008.02.15 |
申请人 |
MAGNACHIP SEMICONDUCTOR LTD. |
发明人 |
SHIN CHANG-HEE;CHO KI-SEOK |
分类号 |
G11C17/00 |
主分类号 |
G11C17/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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