发明名称 |
Methods and structures for planar and multiple-gate transistors formed on SOI |
摘要 |
A semiconductor device includes an insulator layer, a semiconductor layer, a first transistor, and a second transistor. The semiconductor layer is overlying the insulator layer. A first portion of the semiconductor layer has a first thickness. A second portion of the semiconductor layer has a second thickness. The second thickness is larger than the first thickness. The first transistor has a first active region formed from the first portion of the semiconductor layer. The second transistor has a second active region formed from the second portion of the semiconductor layer. The first transistor may be a planar transistor and the second transistor may be a multiple-gate transistor, for example.
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申请公布号 |
US7851276(B2) |
申请公布日期 |
2010.12.14 |
申请号 |
US20070676480 |
申请日期 |
2007.02.19 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
YANG FU-LIANG;YEO YEE-CHIA;HU CHENMING |
分类号 |
H01L21/00;H01L21/336;H01L21/48;H01L21/84;H01L27/01;H01L27/12;H01L29/78;H01L29/786 |
主分类号 |
H01L21/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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