发明名称 |
SiC semiconductor device having bottom layer and method for manufacturing the same |
摘要 |
A SiC semiconductor device includes: a substrate; a drift layer on the substrate; a trench on the drift layer; a base region in the drift layer sandwiching the trench; a channel between the base region and the trench; a source region in the base region sandwiching the trench via the channel; a gate electrode in the trench via a gate insulation film; a source electrode coupled with the source region; a drain electrode on the substrate opposite to the drift layer; and a bottom layer under the trench. An edge portion of the bottom layer under a corner of a bottom of the trench is deeper than a center portion of the bottom layer under a center portion of the bottom of the trench.
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申请公布号 |
US7851854(B2) |
申请公布日期 |
2010.12.14 |
申请号 |
US20080318183 |
申请日期 |
2008.12.23 |
申请人 |
DENSO CORPORATION |
发明人 |
OKUNO EIICHI;SUZUKI NAOHIRO;KATO NOBUYUKI |
分类号 |
H01L29/78;H01L21/336 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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