发明名称 |
PLATING APPARATUS FOR METALLIZATION ON SEMICONDUCTOR WORKPIECE |
摘要 |
The present invention provides a plating apparatus with multiple anode zones and cathode zones. The electrolyte flow field within each zone is controlled individually with independent flow control devices. A gas bubble collector whose surface is made into pleated channels is implemented for gas removal by collecting small bubbles, coalescing them, and releasing the residual gas. A buffer zone built within the gas bubble collector further allows unstable microscopic bubbles to dissolve.
|
申请公布号 |
US2010307913(A1) |
申请公布日期 |
2010.12.09 |
申请号 |
US20100734438 |
申请日期 |
2010.08.09 |
申请人 |
ACM RESEARCH (SHANGHAI) INC. |
发明人 |
MA YUE;WANG XI;HUANG YUNWEN;PANG ZHENXU;NUCH VOHA;WANG DAVID |
分类号 |
C25D17/00;C25D17/02;C25D17/10 |
主分类号 |
C25D17/00 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|