| 摘要 |
1278349 Semi-conductor device HITACHI Ltd 22 July 1970 [23 July 1969] 35545/70 Heading H1K [Also in Division C4] A solid state electronic device comprises a single crystal wafer made of a quaternary compound semi-conductor material consisting of indium, gallium, phosphorus and arsenic, ohmic contacts being provided in contact with opposite surfaces of the wafer. The compound is of composition Ga x In 1-x P y As 1-y where 0<x<1, 0<y<1, y<3À24-2À8x. The crystal can include a PN junction and in various embodiments may be biased to cause it to emit radiation in the visible or infra-red wavelength range, or function as a microwave frequency converter, or function as a parametric amplifier. It may also be used as a varactor diode. Such a crystal without a PN junction may be used as a Gunn diode. The crystal may be grown epitaxially from the vapour phase or from the liquid phase in a reactor tube, impurities being added at this stage, and after the provision of electrodes the wafer is etched to mesa configuration.
|
