发明名称 MULTILAYER ZnO SINGLE CRYSTAL SCINTILLATOR AND METHOD FOR MANUFACTURING SAME
摘要 <p>Provided are a multilayer ZnO single crystal scintillator wherein the light emitting quantity is increased, and a method for manufacturing such scintillator. A multilayer body composed of ZnO semiconductor layers having different band gaps is manufactured, and a layer having a small band gap is made to have a thickness that permits ionization radiation, such as a rays and electronic rays, to enter the layer, thereby the light emitting quantity of the multilayer ZnO single crystal scintillator is greatly increased.</p>
申请公布号 WO2010140426(A1) 申请公布日期 2010.12.09
申请号 WO2010JP56671 申请日期 2010.04.14
申请人 MITSUBISHI GAS CHEMICAL COMPANY, INC.;TOHOKU UNIVERSITY;SEKIWA HIDEYUKI;KOBAYASHI JUN;MIYAMOTO MIYUKI;TOKUTAKE TAICHI;YOSHIKAWA AKIRA;YANAGIDA TAKAYUKI 发明人 SEKIWA HIDEYUKI;KOBAYASHI JUN;MIYAMOTO MIYUKI;TOKUTAKE TAICHI;YOSHIKAWA AKIRA;YANAGIDA TAKAYUKI
分类号 C09K11/00;C09K11/02;C09K11/54;C30B19/02;C30B29/22;C30B33/00;G01T1/20;G01T1/202 主分类号 C09K11/00
代理机构 代理人
主权项
地址