发明名称 |
MULTILAYER ZnO SINGLE CRYSTAL SCINTILLATOR AND METHOD FOR MANUFACTURING SAME |
摘要 |
<p>Provided are a multilayer ZnO single crystal scintillator wherein the light emitting quantity is increased, and a method for manufacturing such scintillator. A multilayer body composed of ZnO semiconductor layers having different band gaps is manufactured, and a layer having a small band gap is made to have a thickness that permits ionization radiation, such as a rays and electronic rays, to enter the layer, thereby the light emitting quantity of the multilayer ZnO single crystal scintillator is greatly increased.</p> |
申请公布号 |
WO2010140426(A1) |
申请公布日期 |
2010.12.09 |
申请号 |
WO2010JP56671 |
申请日期 |
2010.04.14 |
申请人 |
MITSUBISHI GAS CHEMICAL COMPANY, INC.;TOHOKU UNIVERSITY;SEKIWA HIDEYUKI;KOBAYASHI JUN;MIYAMOTO MIYUKI;TOKUTAKE TAICHI;YOSHIKAWA AKIRA;YANAGIDA TAKAYUKI |
发明人 |
SEKIWA HIDEYUKI;KOBAYASHI JUN;MIYAMOTO MIYUKI;TOKUTAKE TAICHI;YOSHIKAWA AKIRA;YANAGIDA TAKAYUKI |
分类号 |
C09K11/00;C09K11/02;C09K11/54;C30B19/02;C30B29/22;C30B33/00;G01T1/20;G01T1/202 |
主分类号 |
C09K11/00 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|