| 摘要 |
PROBLEM TO BE SOLVED: To obtain a highly reliable semiconductor light-emitting element in good yield by improving the coverage of an insulating protective film covering a side face of a pad electrode and a portion of a surface.SOLUTION: The semiconductor light-emitting element includes an n-type semiconductor layer (2) and a p-type semiconductor layer (4), wherein electrodes (6, 7) including a plurality of metal layers are formed over at least one of those n-type semiconductor layer and p-type semiconductor layer, and a protective film (8) is formed which covers side faces of the electrodes and parts of upper surfaces. The side faces of the electrodes (6, 7) that the protective film comes into contact with are each in a forward tapered shape. |
