| 摘要 |
PROBLEM TO BE SOLVED: To provide a field effect transistor which can generate two-dimensional electron gas with high efficiency, and exhibits a small resistance value of a contact resistance. SOLUTION: A spacer layer 13 of the field effect transistor 10 has a band gap larger than a band gap of a channel layer 12. A first electron supply layer 14 is set to have a composition in which an aluminum abundance ratio continuously increases as closer to one Z1 of thickness directions. A second electron supply layer 15 is set to have an aluminum abundance ratio equal to or higher than a maximum value of the aluminum abundance ratio of the first electron supply layer 14. COPYRIGHT: (C)2011,JPO&INPIT
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