发明名称 BIDIRECTIONAL SWITCH
摘要 PROBLEM TO BE SOLVED: To provide a bidirectional switch having a simple circuit configuration to suppress an overvoltage in both directions. SOLUTION: The bidirectional switch includes: a semiconductor switch Q3 which has a drain, a source and a gate, has an HEMT (High Electron Mobility Transistor) structure so that a main electrode having a lower potential of the drain and the source serves as a virtual source and a main electrode having a higher potential of the drain and the source serves as a virtual drain, and turns on/off a current in both directions by a gate signal to be applied between the gate and the virtual source; a gate signal part 13 which is connected between the gate and the virtual source of the semiconductor switch Q3 and applies the gate signal to the gate; and an overvoltage protection circuit which is connected between the virtual drain and the gate of the semiconductor switch Q3 and has a resistor 16 and a constant voltage diode 15. COPYRIGHT: (C)2011,JPO&INPIT
申请公布号 JP2011139290(A) 申请公布日期 2011.07.14
申请号 JP20090297871 申请日期 2009.12.28
申请人 SANKEN ELECTRIC CO LTD 发明人 SATO SHINJI
分类号 H03K17/687;H03K17/08 主分类号 H03K17/687
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