| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device for electric power, capable of suppressing temperature rises at a central portion of a substrate. <P>SOLUTION: The semiconductor device for electric power 10A has a semiconductor substrate 100A, in which electric currents run in the thickness direction 103 of the semiconductor substrate 100A. The semiconductor substrate 100A includes a resistance control structure configured so that the resistance to the currents is higher at a central portion of the semiconductor substrate 100A than an outer periphery of the semiconductor device 100A. <P>COPYRIGHT: (C)2012,JPO&INPIT |
