发明名称 LIGHT EMITTING DIODE CHIP AND METHOD FOR MANUFACTURING THE SAME
摘要 <P>PROBLEM TO BE SOLVED: To provide a light emitting diode chip which can improve characteristics of a beam generated to perform an output coupling more than those of a chip of a conventional system, and can be fully incorporated into an LED casing structure of a conventional form, and to provide a method for manufacturing the light emitting diode chip, being improved so as to take only a slight increase in time and labor technically compared with a conventional method for manufacturing the light emitting diode chip. <P>SOLUTION: A light emitting diode chip has a beam emitting active area (32) with a cross sectional area F<SB POS="POST">L</SB>, and a beam transmission window layer (2) with a refractive index n<SB POS="POST">s</SB>post-connected to the beam emitting active area (32) in an irradiation direction. The window layer has a cross sectional area F<SB POS="POST">C</SB>for an optical output coupling and an output coupling plane contacted with a medium with a refractive index n<SB POS="POST">M</SB>, where n<SB POS="POST">s</SB>>n<SB POS="POST">M</SB>and the cross sectional area F<SB POS="POST">L</SB>of the beam emitting active area (32) is smaller than the cross sectional area F<SB POS="POST">C</SB>of the output coupling plane. <P>COPYRIGHT: (C)2012,JPO&INPIT
申请公布号 JP2012049571(A) 申请公布日期 2012.03.08
申请号 JP20110265941 申请日期 2011.12.05
申请人 OSRAM OPTO SEMICONDUCTORS GMBH 发明人 GEORG BOGNER;JIKUMAR KUGLER;NEUMANN GERALD;ERNST NIRSCHL;OBERSCHMID RAIMUND;KARL-HEINZ SCHLERETH;OLAF SCHONFELD;STATH NORBERT
分类号 H01L33/20;H01L33/02;H01L33/08;H01L33/14;H01L33/44 主分类号 H01L33/20
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