| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a storage element and a memory unit which improve heat stability and reduce a write current. <P>SOLUTION: The storage element having magnetization perpendicular to a film surface comprises a storage layer 17 with a magnetization direction varying corresponding to information, a magnetization fixed layer 15 having magnetization perpendicular to the film face, which serves as reference of information stored in the storage layer 17, an insulation layer 16 of a nonmagnetic material provided between the storage layer 17 and the magnetization fixed layer 15, and a cap layer 18 provided on a face of the storage layer 17 on the side opposite to the insulation layer 16 side. Information is recorded by a magnetization direction of the storage layer 17 varied by injection of an electron spin polarized in a lamination direction. Here, a magnitude of an effective anti-magnetic field applied to the storage layer 17 is adjusted to be smaller than a magnitude of saturation magnetization of the storage layer 17. At least a face of the cap layer 18 contacting the storage layer 17 is formed of a Ta film. <P>COPYRIGHT: (C)2012,JPO&INPIT |
