GROUP III NITRIDE CRYSTAL SUBSTRATE, GROUP III NITRIDE CRYSTAL SUBSTRATE WITH EPITAXIAL LAYER AND SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a group III nitride crystal substrate with a surface polished under predetermined conditions so that a semiconductor device of high characteristics can be manufactured; a group III nitride crystal substrate with an epitaxial layer including the same; and a semiconductor device.

SOLUTION: This group III nitride crystal substrate 410 has a work-affected layer with a thickness of 50 nm or less, and impurity amounts on the surface of the group III nitride crystal substrate 410 are as follows: atoms of elements with 19 or higher atomic number are ≤1×1012atoms/cm2; atoms of elements with 1 to 18 (excluding C) atomic number are ≤1×1014atoms/cm2; O atoms and C atoms are each ≤40 atom% to the total atoms of elements existing on the surface; and N atoms and atoms of group III elements on the surface are 40-60 atom% respectively to the total of N atoms and group III atoms existing on the surface.

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