发明名称 |
RF switch with high isolation performance |
摘要 |
Provided is a RF switch for switching a path of a RF signal using a semiconductor transistor such as a field effect transistor (FET). The RF switch includes a plurality of resonators connected to a RF transmission line, and at least one of switching elements connected in shunt or in series between the plural of resonators. The plurality of resonators resonate by interacting with the switching elements when the switching elements are shorted or open.
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申请公布号 |
US8482360(B2) |
申请公布日期 |
2013.07.09 |
申请号 |
US20080681307 |
申请日期 |
2008.06.26 |
申请人 |
CHANG DONG-PIL;YOM IN-BOK;ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE |
发明人 |
CHANG DONG-PIL;YOM IN-BOK |
分类号 |
H01P1/10;H01P5/12 |
主分类号 |
H01P1/10 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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