溅镀装置、薄膜形成方法及场效电晶体的制造方法,申请号TW098135043-传众专利搜索

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发明名称	溅镀装置、薄膜形成方法及场效电晶体的制造方法
摘要
申请公布号	TWI428464	申请公布日期	2014.03.01
申请号	TW098135043	申请日期	2009.10.16
申请人	爱发科股份有限公司日本	发明人	仓田敬臣;清田淳也;新井真;赤松泰彦;石桥晓;斋藤一也
分类号	C23C14/34;H01L21/336	主分类号	C23C14/34
代理机构		代理人	张耀晖台北市大安区敦化南路2段71号18楼;庄志强台北市大安区敦化南路2段71号18楼
主权项
地址	日本

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