| 摘要 |
PROBLEM TO BE SOLVED: To relax field concentration at corners of a bottom face of a stepped part in a nitride compound-based semiconductor device such as a GaN-based semiconductor device.SOLUTION: A semiconductor device manufacturing method comprises: (A) a step of forming in a nitride compound-based semiconductor layer by dry etching, a stepped part which has grooves sinking from a bottom at corners of the bottom face; and (B) a step of increasing a width of the grooves by wet etching, which are formed in the process (A) and included in the stepped part. |
