| 发明名称 |
MULTILAYER WIRING SUBSTRATE, METHOD OF PRODUCING THE SAME, AND SEMICONDUCTOR PRODUCT |
| 摘要 |
There is provided a multilayer wiring substrate, including: a trench produced at one surface of an insulation layer, the trench having a depth shallower than a thickness of the insulation layer; and a copper plating applied to the trench. Also, there are provided a method of producing the multilayer wiring substrate, and a semiconductor product including the multilayer wiring substrate. |
| 申请公布号 |
US2015029677(A1) |
申请公布日期 |
2015.01.29 |
| 申请号 |
US201414328131 |
申请日期 |
2014.07.10 |
| 申请人 |
Sony Corporation |
发明人 |
INAOKA Toshiyuki;URATSUJI Atsuhiro |
| 分类号 |
H05K1/02;H05K3/00;H05K3/18;H05K1/18 |
主分类号 |
H05K1/02 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A multilayer wiring substrate, comprising:
a trench produced at one surface of an insulation layer, the trench having a depth shallower than a thickness of the insulation layer; and a copper plating applied to the trench. |
| 地址 |
Tokyo JP |
