| 摘要 |
PURPOSE:To increase the etching rate and to decrease damages to a wafer while preventing contamination thereof, by adding a reactive gas to argon gas used for ion milling so that the wafer is pretreated with the mixture of gas before formation of alumi nium wiring. CONSTITUTION:A wafer to be treated is fed into a treatment chamber 5 via a first pretreatment chamber 3 and a second pretreatment chamber 4. Within the treatment chamber 5, the wafer is treated with reactive gas or subjected to reactive ion milling by means of a suddle-field-type gun so that silicon dioxide on the surface of the wafer is removed. The suddle-field-type gun comprises pure carbon plates 6, 7, 8, 9, 10 and 11 as cathodes and pure carbon rods 12 and 13 as anodes which are attached to the pure carbon plate 10 by means of insulating bushes 14. When an inactive gas is introduced into the box formed by these pure carbon plates through an inlet port 7a, mixed gas is ionizpd by application of a voltage and ion beams passing through an ion beam passing hole 6a are applied to the wafer. The wafer is thereby etched in a region where aluminium wiring is to be provided.
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