METHOD FOR THE MANUFACTURE OF NON-PUNCH-THROUGH INSULATED GATE BIPOLAR TRANSISTOR

摘要

A method for the manufacture of non-punch-through insulated gate bipolar transistors (NPT-IGBT) comprises these steps: forming on a first surface of a silicon wafer an IGBT structure until interlayer dielectric deposition is complete; covering the interlayer dielectric with a protective film; subjecting the wafer to a thinning process, starting from a second surface of the silicon wafer opposite said first surface and then, after such thinning, forming a P-type layer on said second surface; discarding the protective film and subjecting the silicon wafer to an annealing process the temperature whereof is greater than 500 C; forming a metal layer on the surface of the P-type layer and the interlayer dielectric.