| 摘要 |
The present invention relates to an Cu_2ZnSnS_4-xSe_x (0<=x<=4) thin film solar cell and a manufacture method thereof forming the Cu_2ZnSnS_4-xSe_x (0<=x<=4) film of a light absorbing layer to form a precursor film made of Cu, Zn, Sn, and Se through a constant-current method with an ionic liquid as a solvent, and features to manufacture the Cu_2ZnSnS_4-xSe_x (0<=x<=4) film through a sulfur thermal treatment. Provided are a simple electro deposition method and a multistage deposition and thermal treatment method offering a non-vacuum electro deposition method which is advantageous from a cost point of view of a mass production for a large area when compared to a vacuum method. The simple electro deposition method and the multistage deposition and thermal treatment method can form the four elements at once as well as producing less harmful byproducts formed by the side reaction using an ionic liquid which are harmful to the human body. |
