发明名称 多結晶シリコンの製造方法
摘要 <p>The invention relates to a polycrystalline silicon production method. The inventive method involves supplying a gas mixture based on a silicon-containing gas to a reduction reactor via a tube system and precipitating silicon on heated surfaces in such a way that an effluent gas mixture is formed. The silicon precipitation process is simultaneously carried out in at least two reactors which are connected in series by the tube system for transporting the gas mixture. Then, the gas mixture used for the operation of all the reactors is supplied at entry into the first reactor and is continuously transmitted through all the connected in series reactors.</p>
申请公布号 JP5668193(B2) 申请公布日期 2015.02.12
申请号 JP20110510452 申请日期 2009.04.20
申请人 发明人
分类号 C01B33/035 主分类号 C01B33/035
代理机构 代理人
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