SEMICONDUCTOR DEVICE MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To prevent deterioration in characteristics of a capacitor.SOLUTION: A semiconductor device manufacturing method comprises: a process of forming a capacitor above a substrate; a process of forming an interlayer insulation film which covers the capacitor; a process of etching the interlayer insulation film to form in the interlayer insulation film, a contact hole which reaches the capacitor; a process of forming a first hydrogen barrier film in the contact hole by an ALD method; a process of etching back the first hydrogen barrier film to expose at least a part of the capacitor in the contact hole; and a process of forming in the contact hole, a first conductive film which covers the exposed capacitor after the exposing process.