| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a system and a method for continuous and quick growth of single crystal silicone having ultrahigh purity and long extreme minority carrier life. <P>SOLUTION: An improved CZ system based on the Czochralski method for continuous growth of a single crystal ingot includes an essentially flat crucible having a small aspect ratio and large diameter and having a selective weir encircling the crystal. The crucible having the small aspect ratio essentially eliminates convection flow in the final single crystal silicon ingot to reduce oxygen content. A silicon premelting furnace chamber controlled under different standard provides a continuous supply source of molten silicon to the growth crucible while advantageously eliminating necessity of vertical movement and crucible pull-up system during crystal pull-up process. A corresponding temperature zone over the molten material is constructed by a plurality of heaters under the crucible. The temperature outputs of the heaters are individually controlled for providing optimum temperature control over the molten material and at the crystal/molten material interface for improved crystal growth. <P>COPYRIGHT: (C)2012,JPO&INPIT</p> |
