发明名称 EXTREME EDGE AND SKEW CONTROL IN ICP PLASMA REACTOR
摘要 Embodiments of the present disclosure provide apparatus and methods for improving plasma uniformity around edge regions and/or reducing non-symmetry in a plasma processing chamber. One embodiment of the present disclosure provides a plasma tuning assembly having one or more conductive bodies disposed around an edge region of a substrate support in a plasma processing chamber. The one or more conductive bodies are isolated from other chamber components and electrically floating in the processing chamber near the edge region without connecting to active electrical potentials. During operation, when a plasma is maintained in the plasma processing chamber, the presence of the one or more conductive bodies affects the plasma distribution near the one or more conductive bodies.
申请公布号 US2015181684(A1) 申请公布日期 2015.06.25
申请号 US201414543316 申请日期 2014.11.17
申请人 Applied Materials, Inc. 发明人 BANNA Samer;KNYAZIK Vladimir;TANTIWONG Kyle
分类号 H05H1/24;H01L21/67;H01L21/3065 主分类号 H05H1/24
代理机构 代理人
主权项 1. A plasma tuning assembly, comprising: one or more conductive bodies configured to be disposed around a substrate supporting surface of a substrate support assembly in a plasma processing chamber, wherein the one or more conductive bodies electrically float in the plasma processing chamber without in electrical contact with a chamber body and the substrate support assembly; and a support assembly for supporting the one or more conductive bodies in the plasma processing chamber.
地址 Santa Clara CA US