发明名称 フラッシュメモリのセンスアンプ
摘要 <p>A sense amplifier has a reference cell current branch in which a reference cell determines a reference cell current, a column load converts the reference cell current to a reference voltage, and a feedback circuit to maintain the reference cell drain voltage. The sense amplifier also has a main cell current branch in which a main cell operationally selected from an array of flash memory cells determines a main cell current, a column load converts the main cell current to a main voltage, and a feedback circuit to maintain the main cell drain voltage. A differential amplifier compares the reference voltage with the main voltage and furnishes a logical level at its output depending on the relative values. A boost circuit has a pull up section coupled across the column load and a pull down section coupled across the main cell for accelerating the logical zero sensing time.</p>
申请公布号 JP5816211(B2) 申请公布日期 2015.11.18
申请号 JP20130045831 申请日期 2013.03.07
申请人 发明人
分类号 G11C16/06 主分类号 G11C16/06
代理机构 代理人
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