发明名称 荷電粒子ビーム描画方法
摘要 <p><P>PROBLEM TO BE SOLVED: To provide a charged particle beam lithography method with excellent lithography time prediction property or high lithography precision by executing lithography preprocessing using a pseudo pattern of an identification code region. <P>SOLUTION: A charged particle beam lithography method includes: a step of inputting main lithography data in which a pattern to be drawn in a main region is defined to a charged particle beam lithography device; a step of generating pseudo identification code lithography data in which a pseudo pattern of the pattern to be drawn in an identification code region is defined; a lithography preprocessing step of using the main lithography data and the pseudo identification code lithography data to calculate shot density or pattern region density; a step of generating the identification code lithography data in which the pattern to be drawn in the identification code region is defined; a step of converting the main lithography data into first shot data; a step of drawing in the main region using the first shot data; a step of converting the identification code lithography data into second shot data; and a step of drawing in the identification code region using the second shot data. <P>COPYRIGHT: (C)2013,JPO&INPIT</p>
申请公布号 JP5833401(B2) 申请公布日期 2015.12.16
申请号 JP20110216825 申请日期 2011.09.30
申请人 株式会社ニューフレアテクノロジー 发明人 山村 光;神代 賢一
分类号 H01L21/027;G03F7/20 主分类号 H01L21/027
代理机构 代理人
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