Substrate cleaning apparatus and vacuum processing system

摘要

A substrate cleaning apparatus includes a supporting unit, provided in a processing chamber having a gas exhaust port, for supporting a substrate; one or more nozzle units, each for ejecting gas clusters to a peripheral portion of the substrate supported by the supporting unit to remove unnecessary substances from the peripheral portion; and a moving mechanism for changing relative positions of the supporting unit and the nozzle unit during ejecting the gas clusters. Each nozzle unit discharges a cleaning gas having a pressure higher than that in the processing chamber so that the cleaning gas is adiabatically expanded to form aggregates of atoms and/or molecules.

主权项

1. A substrate cleaning apparatus comprising:
a processing chamber comprising a gas exhaust port; a supporting unit configured to support a substrate, said supporting unit being provided in said processing chamber; one or more nozzle units, each configured to eject gas clusters-to remove unnecessary substances from the substrate; and a moving mechanism configured to change relative positions of the supporting unit and the nozzle units during ejecting the gas clusters, wherein each nozzle unit discharges a cleaning gas having a pressure higher than that in the processing chamber so that the cleaning gas is adiabatically expanded to form aggregates of atoms and/or molecules, wherein said substrate cleaning apparatus further comprises a cleaning gas supply source for supplying said cleaning gas, a flow rate control unit for controlling a flow rate of said cleaning gas, a first gas channel through which said cleaning gas is supplied and a second gas channel through which a pressure increasing gas is supplied, wherein each nozzle unit comprises a pressure chamber to which said first and said second gas channels are connected, wherein said nozzle units comprise a nozzle unit disposed below said substrate, and wherein said pressure chamber comprises a base end side to which said first and said second gas channels are connected and a leading end side having a discharge port facing said substrate and configured to eject said gas clusters thereto.