发明名称 Semiconductor device, semiconductor memory device and data processing system comprising semiconductor system
摘要 A semiconductor device comprises a memory cell, a bit line, a sense amplifier operating between a first voltage and a second voltage higher than the first voltage, a transfer control circuit including a transfer transistor, and a write circuit writing data into the memory cell through the bit line based on the first voltage and a third voltage. The sense amplifier receives and amplifiers the signal voltage at a sense node when the transfer transistor controls the connection between the bit line and the sense node in response to a transfer control voltage. The third voltage is set to a voltage lower than the second voltage and higher than the transfer control voltage, and the sense node is set to a voltage higher than the transfer control voltage in an initial period of a read operation before the data of the memory cell is read out to the bit line.
申请公布号 USRE45819(E1) 申请公布日期 2015.12.15
申请号 US201414302867 申请日期 2014.06.12
申请人 PS4 Luxco S.a.r.l. 发明人 Kajigaya Kazuhiko
分类号 G11C11/24;G11C7/06;G11C11/4091;G11C11/404 主分类号 G11C11/24
代理机构 Kunzler Law Group, PC 代理人 Kunzler Law Group, PC
主权项 1. A semiconductor device comprising: a memory cell storing data; a bit line connected to the memory cell; a sense amplifier operating between a first voltage and a second voltage higher than the first voltage, the sense amplifier receiving a signal voltage read out to the bit line in response to the data of the memory cell at a sense node connected to a gate of a transistor and amplifying a voltage at the sense node; a transfer control circuit including a transfer transistor controlling an electrical connection between the bit line and the sense node in response to a transfer control voltage inputted to a gate; and a write circuit writing data into the memory cell through the bit line based on the first voltage and a third voltage corresponding to data of high-level of the memory cell, wherein the third voltage is set to a voltage lower than the second voltage and higher than the transfer control voltage, and the sense node is set to a voltage higher than the transfer control voltage in an initial period of a read operation before the data of the memory cell is read out to the bit line.
地址 Luxembourg LU