Methods of patterning features having differing widths

摘要

Disclosed herein are methods of patterning features that have differing widths. In one example, the method includes forming a layer of material above a semiconductor substrate, forming a masking layer above the layer of material, wherein the masking layer is comprised of a first plurality features positioned above a first region of the semiconductor substrate and a second plurality of features positioned above a second region of the semiconductor substrate, wherein the first and second plurality of features have the same pitch spacing and wherein the first and second plurality of features have different widths, and performing at least one etching process on the layer of material through the masking layer.

主权项

1. A method, comprising:
forming a layer of material above a semiconductor substrate; forming a masking layer comprising a first plurality of features and a second plurality of features above said layer of material, wherein forming said masking layer comprises:
forming a plurality of first mandrels above a first region of said semiconductor substrate and a plurality of second mandrels above a second region of said semiconductor substrate;forming a first spacer on opposing sidewalls of each of said pluralities of first and second mandrels, wherein said first spacers formed above said first region comprise said first plurality of features;removing each of said pluralities of first and second mandrels from above said respective first and second regions selectively to said first spacers; andafter removing said pluralities of first and second mandrels, selectively forming a plurality of combined spacers above said second region by forming a second spacer on opposing sidewalls of each of said first spacers formed above said second region, said plurality of combined spacers comprising said second plurality of features, wherein said first plurality of features and said second plurality of features have a same pitch spacing and wherein said first plurality of features and second plurality of features have different widths; and performing at least one etching process on said layer of material through said masking layer.