Nitride semiconductor light emitting device

摘要

A nitride semiconductor light emitting device includes a laminate, first and second electrodes, a conductive layer, and a phosphor layer. The laminate includes a first layer including a first electroconductive-type layer, a second layer including a second electroconductive-type layer, a light emitting layer between the first and second layers, and a nitride semiconductor. The laminate has a recessed portion extending from the first layer to the second layer in a central portion or an outer peripheral portion. The first electrode arranged on the first layer reflects light emitted from the light emitting layer. The second electrode is surrounded by the light emitting layer or on the periphery thereof and connected to a bottom surface of the recessed portion. The conductive layer is arranged on a surface of the second layer at a side opposite to the light emitting layer. The phosphor layer overlies the second layer and the conductive layer.

主权项

1. A nitride semiconductor light emitting device, comprising:
a multi layered nitride semiconductor including a first layer of a first conductivity type, a second layer of a second conductivity type different from the first conductivity type, and a light emitting layer between the first layer and the second layer, wherein a recess extends inwardly of the first layer and the light emitting layer; a first electrode contacting the first layer; a second electrode contacting the second layer; and a transparent conductive layer disposed on the second layer directly over the recess.