| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a plasma processing apparatus that can generate plasma stably and efficiently and efficiently process the whole desired processing area of a base material in short time when high temperature thermal processing is uniformly conducted on the neighborhood of the surface of the base material in very short time or when plasma based on reaction gas is applied or plasma and reaction gas flow are simultaneously applied to the base material to conduct low temperature plasma processing on the base material.SOLUTION: In an induction coupling type plasma torch unit T, a solenoid coil 3 is disposed in the vicinity of a first quartz block 4 and a second quartz block 5, and a space 7 in an elongated chamber has an annular shape. Plasma P occurring in the space 7 in the elongated chamber is exposed to the base material 2 at an elongated and linear opening portion 8 in the elongated chamber. The elongated chamber and a base material mount table 1 are relatively moved in a direction vertical to the longitudinal direction of the opening portion 8 to process the base material 2.</p> |
