| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a semiconductor device including an oxide semiconductor with excellent electric characteristics. <P>SOLUTION: A semiconductor device comprises: an oxide semiconductor layer; a first region having conductivity on the oxide semiconductor layer; a source electrode on the first region; a second region having conductivity on the oxide semiconductor layer; a drain electrode on the second region; and a gate electrode on the oxide semiconductor layer. The gate electrode has a region overlapping with the first region, and has a region overlapping with the second region. <P>COPYRIGHT: (C)2013,JPO&INPIT</p> |
