Implementing enhanced data read for multi-level cell (MLC) memory using threshold voltage-drift or resistance drift tolerant moving baseline memory data encoding

摘要

A method and apparatus are provided for implementing enhanced data read for multi-level cell (MLC) memory using threshold-voltage-drift or resistance-drift tolerant moving baseline memory data encoding. A data read back for data written to the MLC memory using threshold-voltage-drift or resistance-drift tolerant moving baseline memory data encoding is performed, higher voltage and lower voltage levels are compared, and respective data values are identified responsive to the compared higher voltage and lower voltage levels.

主权项

1. A method for implementing data read for multi-level cell (MLC) memory comprising:
maintaining separate data identifying a current baseline voltage level on predefined MLC reference memory cells; updating the separate data upon performing a partial-erase operation; performing a data read back for data written to the MLC memory using an identified baseline voltage level; comparing higher voltage and lower voltage levels; and identifying respective data values responsive to the compared higher voltage and lower voltage levels.