发明名称 Capacitive micro-machined ultrasonic transducer and method of singulating the same
摘要 A capacitive micro-machined ultrasonic transducer (CMUT) and a method of singulating the same. Singulating CMUTs may include forming first trenches in regions of a device wafer defining a plurality of ultrasonic transducer structures, the device wafer including a plurality of the ultrasonic transducer structures, forming an ultrasonic transducer wafer having a plurality of ultrasonic transducers by bonding an electrode pad wafer supplying electricity to the plurality of ultrasonic transducers and the device wafer, and dicing the ultrasonic transducer wafer to form the plurality of ultrasonic transducers by cutting the plurality of ultrasonic transducer structures on the first trench and the electrode pad wafer below the first trench.
申请公布号 US9206038(B2) 申请公布日期 2015.12.08
申请号 US201414298195 申请日期 2014.06.06
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 Jeong Byung-gil;Hong Seog-woo
分类号 B81C1/00;B06B1/02;H04R19/00 主分类号 B81C1/00
代理机构 Sughrue Mion, PLLC 代理人 Sughrue Mion, PLLC
主权项 1. A method of singulating a capacitive micro-machined ultrasonic transducer (CMUT), the method comprising: forming first trenches in regions of a device wafer, the device wafer including a plurality of ultrasonic transducer structures thereon; forming an ultrasonic transducer wafer having a plurality of ultrasonic transducers by bonding an electrode pad wafer and the device wafer; dicing the ultrasonic transducer wafer to singulate each of the plurality of ultrasonic transducers by cutting the plurality of ultrasonic transducer structures at the first trench and the electrode pad wafer below the first trench; and forming second trenches defining a plurality of elements corresponding to each of the plurality of it sonic transducer structures in the device wafer, wherein the forming of the first trenches is performed at the same time as the forming of the second trenches, wherein a width of the first trenches is greater than a width of the second trenches.
地址 Suwon-si KR