Circuit element including a layer of a stress-creating material providing a variable stress and method for the formation thereof

摘要

A transistor includes a source region, a drain region, a channel region, a gate electrode and a layer of a stress-creating material. The stress-creating material provides a stress that is variable in response to a signal acting on the stress-creating material. The layer of stress-creating material is arranged to provide a stress in at least the channel region. The stress provided in at least the channel region is variable in response to the signal acting on the stress-creating material. Layers of stress-creating material providing a stress that is variable in response to a signal acting on the stress-creating material may also be used in circuit elements other than transistors, for example, resistors.

主权项

1. A circuit element, comprising:
a semiconductor region; and a layer of a stress-creating material, said stress-creating material providing a stress that is variable in response to a signal acting on said stress-creating material; wherein said layer of stress-creating material is arranged to provide a stress in said semiconductor region, said stress provided in said semiconductor region being variable in response to said signal acting on said stress-creating material.