发明名称 PLASMA CVD DEVICE AND PLASMA CVD METHOD USING THE SAME
摘要 PROBLEM TO BE SOLVED: To provide plasma CVD device and plasma CVD method that can suppress occurrence of particles and facilitate maintenance.SOLUTION: A plasma CVD device has a vacuum chamber 1, a first electrode plate 5 disposed in the vacuum chamber 1, a first electrode part A having a first heater 6 as a first heating part for heating the first electrode plate 5, a second electrode plate which is provided to confront the first electrode plate 5 and also serves as a board holder 2 in which a processing target board W is mounted, a second electrode part B having a second heater 3 as a second heating part for heating the second electrode plate, and a gas supply part for supplying raw material gas into the vacuum chamber 1. High-frequency electric field is applied between the first electrode plate 5 and the second electrode plate to generate plasma discharge and form thin film on the surface of the processing target board W.
申请公布号 JP2015220288(A) 申请公布日期 2015.12.07
申请号 JP20140101590 申请日期 2014.05.15
申请人 MITSUBISHI ELECTRIC CORP 发明人 KAWASAKI TAKAHIRO
分类号 H01L21/31;C23C16/44;C23C16/509;H01L21/318 主分类号 H01L21/31
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