| 摘要 |
PROBLEM TO BE SOLVED: To provide a silicon carbide semiconductor device and a manufacturing method of the same, which has high reliability and which can maintain channel resistance low.SOLUTION: A silicon carbide semiconductor device comprises a silicon carbide substrate 10, a gate oxide film 15 and a gate electrode 27. On a principal surface 10a, a trench TR having a side surface SW and a bottom BT is provided. A contact C2 of a first side surface part SW1 and a second side surface part SW2 is located in a third impurity region 14. An angle &thetas;1 formed by a straight line which passes the contact C2 of the first side surface part SW1 and the second side surface part SW2 and is parallel with the principal surface 10a, is smaller than an angle &thetas;2 formed by a boundary surface 13a of the first impurity region 12 and the second impurity region 13, and the second side surface part SW2. A thickness of the gate oxide film 15 on a contact C1 of the principal surface 10a and the first side surface part SW1 is larger than a thickness of the gate oxide film 15 on the second impurity region 13. |
