STRUCTURE AND METHOD FOR INTEGRATED CIRCUITS PACKAGING WITH INCREASED DENSITY

摘要

A method of forming a semiconductor package (250)comprises forming one or more first vias (104) in a first side (112) of a substrate (102) and attaching a first side (124) of a first microelectronic element (122) to the first side of the substrate (102). The first microelectronic element (122) is electrically coupled to at least one of the one or more first vias (104). The method further comprise obtaining a second microelectronic element (202) including one or more second vias (207) in a first side (204) of the second microelectronic element (202), and attaching a second side (114) of the substrate (102) to the first side (204) of the second microelectronic element (202). The second microelectronic element (202) is electrically coupled to at least one of the one or more first vias (104). Each of one or more connecting elements (208) has a first end (208a) attached to a first side (204) of the second microelectronic element (202) and a second end (208b) extends beyond a second side of the first microelectronic element (122).