INJECTION CONTROL IN SEMICONDUCTOR POWER DEVICES

摘要

Semiconductor power devices can be formed on substrate structure having a lightly doped semiconductor substrate of a first conductivity type or a second conductivity type opposite to the first conductivity type. A semiconductive first buffer layer of the first conductivity type formed above the substrate. A doping concentration of the first buffer layer is greater than a doping concentration of the substrate. A second buffer layer of the second conductivity type formed above the first buffer layer. An epitaxial layer of the second conductivity type formed above the second buffer layer. A doping concentration of the epitaxial layer is greater than a doping concentration of the second buffer layer. This abstract is provided to allow a searcher or reader to quickly ascertain the subject matter of the disclosure with the understanding that it will not be used to interpret or limit the scope or meaning of the claims.

主权项

1. A substrate structure, comprising:
a lightly doped semiconductor substrate of a first conductivity type or a second conductivity type opposite to the first conductivity type; a semiconductive first buffer layer of the first conductivity type formed above the lightly doped semiconductor substrate, wherein a doping concentration of the first buffer layer is greater than a doping concentration of the lightly doped semiconductor substrate; a semiconductive second buffer layer of the second conductivity type formed above the first buffer layer; and a semiconductive epitaxial layer of the second conductivity type formed above the second buffer layer, wherein a doping concentration of the epitaxial layer is greater than a doping concentration of the second buffer layer.