| 发明名称 |
HARDMASK COMPOSITION AND METHOD OF FORMING PATTERN BY USING THE HARDMASK COMPOSITION |
| 摘要 |
A hardmask composition may include a solvent and a 2-dimensional carbon nanostructure containing about 0.01 atom % to about 40 atom % of oxygen or a 2-dimensional carbon nanostructure precursor thereof. A content of oxygen in the 2-dimensional carbon nanostructure precursor may be lower than about 0.01 atom % or greater than about 40 atom %. The hardmask composition may be used to form a fine pattern. |
| 申请公布号 |
US2015348794(A1) |
申请公布日期 |
2015.12.03 |
| 申请号 |
US201514725390 |
申请日期 |
2015.05.29 |
| 申请人 |
Samsung Electronics Co., Ltd. |
发明人 |
KIM Sangwon;SHIN Hyeonjin;PARK Seongjun |
| 分类号 |
H01L21/308;H01L21/02;H01L21/324 |
主分类号 |
H01L21/308 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A hardmask composition comprising:
a 2-dimensional carbon nanostructure containing about 0.01 atom % to about 40 atom % of oxygen or a 2-dimensional carbon nanostructure precursor thereof; and a solvent. |
| 地址 |
Suwon-si KR |
