| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a bonded wafer having an active layer of high flatness, even if the active layer is extremely thin.SOLUTION: A method of manufacturing a bonded wafer has a stop layer formation step for forming a stop layer 16 at a position of predetermined depth in a wafer 11 for active layer, by irradiating the surface 11A of the wafer 11 for active layer with cluster ions 15, an insulating layer formation step for forming an insulating layer 18 at least on one surface 12A of a wafer 12 for support substrate, a bonding step for bonding the stop layer 16 side surface of the wafer 11 for active layer to the wafer 12 for support substrate, with an insulating film 18 interposed therebetween, and a film thickening step for thinning a portion in the bonded wafer, and removing to the stop layer 16, the portion corresponding to the wafer 11 for active layer. |
