| 摘要 |
A semiconductor device comprises: a device isolation area which defines an active area on a substrate; and gate structures which are embedded in the active area on the substrate, wherein at least one of the gate structures includes a gate trench, a gate insulation layer which is conformally formed on an inner wall of the gate trench, a gate barrier pattern which is conformally formed on the gate insulation layer of a lower area of the gate trench, a gate electrode pattern which is formed on the gate barrier pattern, and fills the lower area of the gate trench, an electrode protective layer which is conformally formed on the gate insulation layer of the upper area of the gate trench to come in contact with the gate barrier pattern and the gate electrode pattern, a buffer oxide layer which is conformally formed on the electrode protective layer, and a gate capping insulation layer which is formed on the buffer oxide layer to fill the upper area of the gate trench. |
