Gallium nitride (GaN) device with leakage current-based over-voltage protection

摘要

A gallium nitride (GaN) device with leakage current-based over-voltage protection is disclosed. The GaN device includes a drain and a source disposed on a semiconductor substrate. The GaN device also includes a first channel region within the semiconductor substrate and between the drain and the source. The GaN device further includes a second channel region within the semiconductor substrate and between the drain and the source. The second channel region has an enhanced drain induced barrier lowering (DIBL) that is greater than the DIBL of the first channel region. As a result, a drain voltage will be safely clamped below a destructive breakdown voltage once a substantial drain current begins to flow through the second channel region.

主权项

1. A gallium nitride (GaN) device with leakage current-based over-voltage protection comprising:
a semiconductor substrate; a drain disposed on the semiconductor substrate; a source disposed on the semiconductor substrate; a first channel region within the semiconductor substrate and between the drain and the source; a second channel region within the semiconductor substrate and between the drain and the source wherein the second channel region has an enhanced drain induced barrier lowering (DIBL) that is greater than the DIBL of the first channel region; a gate having gate segments disposed on the substrate adjacent to the second channel region; and an insulator extending between the gate segments and the semiconductor substrate, wherein the DIBL of the second channel region is controlled by a thickness of the insulator.