| 发明名称 |
COMPONENT, FOR EXAMPLE NMOS TRANSISTOR, WITH AN ACTIVE REGION UNDER RELAXED COMPRESSIVE STRESS, AND ASSOCIATED DECOUPLING CAPACITOR |
| 摘要 |
An integrated circuit includes a substrate and a circuit component (such as a MOS device or resistance) disposed at least partially within an active region of the substrate limited by an insulating region. A capacitive structure including a first electrode (for connection to a first potential such as ground) and a second electrode (for connection to a second potential such as a supply voltage) is provided in connection with the insulating region. One of the first and second electrodes is situated at least in part within the insulating region. The capacitive structure is thus configured in order to allow a reduction in compressive stresses within the active region. |
| 申请公布号 |
US2015340426(A1) |
申请公布日期 |
2015.11.26 |
| 申请号 |
US201514715814 |
申请日期 |
2015.05.19 |
| 申请人 |
STMICROELECTRONICS (ROUSSET) SAS |
发明人 |
Wuidart Sylvie;Rivero Christian;Bouton Guilhem;Fornara Pascal |
| 分类号 |
H01L49/02;H01L27/06;H01L29/423;H01L27/115;H01L29/78 |
主分类号 |
H01L49/02 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. An integrated circuit, comprising:
a substrate; at least one component disposed at least partially within an active region of the substrate limited by an insulating region; a capacitive structure having a first electrode configured to be connected to a first potential and a second electrode configured to be connected to a second potential, wherein at least one of the first and second electrodes of the capacitive structure is situated at least, in part, within the insulating region. |
| 地址 |
Rousset FR |
