SILICON ETCHING LIQUID, SILICON ETCHING METHOD, AND MICROELECTROMECHANICAL ELEMENT

摘要

The present invention is able to provide: a silicon etching liquid which anisotropically dissolves single crystal silicon, and which is characterized by containing (1) potassium hydroxide or sodium hydroxide, (2) a hydroxyl amine and (3) a cyclic compound represented by general formula (I), which has a thiourea group and wherein N and N′ are linked; and a silicon etching method which uses this silicon etching liquid.;;(In general formula (I), Q represents an organic group having a saturated or unsaturated carbon-carbon bond.) By using the above-described silicon etching liquid, high etching rate can be achieved without lowering the etching rate of silicon and stability of the etching liquid is not impaired even in cases where copper is present in the etching liquid and/or where copper ions are dissolved in the etching liquid.

主权项

1. A silicon etching liquid, which anisotropically dissolves single crystal silicon, and which contains (1) potassium hydroxide or sodium hydroxide, (2) a hydroxylamine and (3) a cyclic compound represented by general formula (I), which has a thiourea group and wherein N and N′ are linked:wherein in general formula (I), Q represents an organic group having a saturated or unsaturated carbon-carbon bond.