RESIST UNDERLAYER FILM FORMING COMPOSITION FOR LITHOGRAPHY CONTAINING POLYMER THAT CONTAINS ACRYLAMIDE STRUCTURE AND ACRYLIC ACID ESTER STRUCTURE

摘要

[Problem] To provide a resist underlayer film forming composition for forming a resist underlayer film, to which a pattern can be transferred from an upper layer, which can be dry etched during processing of a substrate, and which can be removed with use of an aqueous alkaline solution after the processing of the substrate. [Solution] A resist underlayer film forming composition which contains: a polymer (A) having a unit structure represented by formula (1) and a unit structure represented by formula (2); a crosslinkable compound (B) having at least two groups selected from among a blocked isocyanate group, a methylol group and an alkoxymethyl group having 1-5 carbon atoms; and a solvent (C). This composition is characterized in that the polymer (A) is a polymer wherein the unit structure represented by formula (1) and the unit structure represented by formula (2) are copolymerized at a (unit structure represented by formula (1)):(unit structure represented by formula (2)) ratio of 25-60:75-40 in terms of mol%.