| 发明名称 |
THIN FILM TRANSISTOR SUBSTRATE, METHOD FOR FORMING THE SAME, AND DISPLAY |
| 摘要 |
A thin film transistor substrate includes: a substrate; a gate disposed on the substrate; a gate insulating layer disposed on the substrate and covering the gate; an active layer disposed on the gate insulating layer and above the gate, and the active layer has a first oxygen vacancy portion and a second oxygen vacancy portion; a source electrode and a drain electrode disposed on the active layer, the source electrode is connected to the first oxygen vacancy portion, and the drain electrode is connected to the second oxygen vacancy portion. |
| 申请公布号 |
US2015340446(A1) |
申请公布日期 |
2015.11.26 |
| 申请号 |
US201514708491 |
申请日期 |
2015.05.11 |
| 申请人 |
InnoLux Corporation |
发明人 |
LEE Kuan-Feng;LAI Hao-Chuan |
| 分类号 |
H01L29/36;H01L29/66;H01L27/12;H01L29/786 |
主分类号 |
H01L29/36 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A thin film transistor substrate, comprising:
a substrate; a gate disposed on the substrate; a gate insulating layer disposed on the substrate and covering the gate; an active layer disposed on the gate insulating layer and above the gate, and the active layer has a first oxygen vacancy portion and a second oxygen vacancy portion; and a source electrode and a drain electrode disposed on the active layer, the source electrode is connected to the first oxygen vacancy portion, and the drain electrode is connected to the second oxygen vacancy portion. |
| 地址 |
Miao-Li County TW |
