| 发明名称 |
GROUP III NITRIDE BULK CRYSTALS AND THEIR FABRICATION METHOD |
| 摘要 |
In one instance, the invention provides a bulk crystal of group III nitride having a thickness of more than 1 mm without cracking above the sides of a seed crystal. This bulk group III nitride crystal is expressed as Gax1Aly1In1-x1-y1N (0≦x1≦1, 0≦x1+y1≦1) and the seed crystal is expressed as Gax2Aly2In1-x2-y2N (0≦x2≦1, 0≦x2+y2≦1). The bulk crystal of group III nitride can be grown in supercritical ammonia or a melt of group III metal using at least one seed crystal having basal planes of c-orientation and sidewalls of m-orientation. By exposing only c-planes and m-planes in this instance, cracks originating from the sides of the seed crystal are avoided. |
| 申请公布号 |
US2015340444(A1) |
申请公布日期 |
2015.11.26 |
| 申请号 |
US201514720819 |
申请日期 |
2015.05.24 |
| 申请人 |
SIXPOINT MATERIALS, INC. ;SEOUL SEMICONDUCTOR CO., LTD. |
发明人 |
HASHIMOTO Tadao;LETTS Edward |
| 分类号 |
H01L29/20;H01L29/32 |
主分类号 |
H01L29/20 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A bulk crystal of group III nitride having a composition of Gax1Aly1In1-x1-y1N (0≦x1≦1, 0≦x1+y1≦1) and containing a seed crystal having a composition of Gax2Aly2In1-x2-y2N (0≦x2≦1, 0≦x2+y2≦1), wherein the bulk crystal has a thickness greater than 1 mm and the bulk crystal has fewer cracks within the bulk crystal above the seed crystal's edge than a comparative bulk crystal grown under otherwise identical conditions but grown using a square seed having the same surface area as said seed crystal but having m-plane and a-plane walls. |
| 地址 |
Buellton CA US |
